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Product Detailed Parameters
- Description：MOSFET N-CH 30V 20A 8SOIC
- Series：SRFET™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4512 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4714 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It integrates two independent N-channel MOSFETs within a single SOIC-8 surface-mount package, utilizing advanced trench technology to achieve low on-resistance and fast switching speeds. The device is designed for high-efficiency power management applications, offering improved thermal performance and reduced board space compared to discrete solutions. It operates with a drain-source voltage rating of 30V and supports continuous current handling suitable for various consumer and industrial electronic circuits.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a compact SOIC-8 package
- Advanced trench technology providing low on-resistance for enhanced power efficiency
- Fast switching characteristics optimized for high-frequency power conversion applications
Applications
- Low-side switching in notebook CPU core power conversion circuits
- Synchronous rectification in DC-DC converter modules
- Load switching in portable consumer electronics devices
Procurement Notes
Verify the specific suffix code on the component marking to ensure compatibility with the required tape-and-reel packaging format. Confirm RoHS compliance status through the manufacturer's official documentation prior to integration. Ensure that the sourcing channel provides traceability to Alpha & Omega Semiconductor to guarantee authenticity and adherence to quality standards.
Selection Notes
Select this component when a design requires two matched N-channel switches in a minimal footprint. The dual configuration reduces assembly complexity and improves thermal distribution compared to using separate discrete transistors. Evaluate the total on-resistance and gate charge specifications against the target switching frequency and load current requirements to ensure optimal efficiency.
Part Context
This dual MOSFET belongs to the AO4xxx series from Alpha & Omega Semiconductor, which focuses on low-voltage power management solutions. The series utilizes proprietary trench technology to deliver superior performance in terms of on-resistance and switching speed. These components are widely used in portable electronics and computing systems where space constraints and power efficiency are critical design parameters.
Replacement Considerations
Direct replacements must match the dual N-channel configuration, 30V rating, and SOIC-8 package. Verify pinout compatibility and electrical parameters such as RDS(on) and gate threshold voltage before substitution.
