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The AO4722 is a 30V N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing SRFET™ trench technology with an integrated Schottky diode. It operates in SOIC-8 packages. Key electrical parameters include a drain-source voltage of 30V and continuous drain current of 11.6A at VGS=10V. On-resistance is less than 14mΩ at VGS=10V and 22mΩ at VGS=4.5V. The device features low gate charge (Qg=20nC @10V) and fast switching times. Thermal resistance RθJA is 75°C/W, with power dissipation up to 1.7W at 25°C ambient.
Verify the specific revision status and manufacturing date code upon procurement. Confirm that the component meets RoHS compliance standards as indicated in the datasheet. Ensure the ordering suffix matches the required tape and reel or tube packaging configuration. Check for any specific handling requirements related to moisture sensitivity levels before assembly.
Select this component when a 30V N-Channel MOSFET with an integrated body diode is required. Consider its low gate charge for high-frequency switching efficiency. Evaluate thermal management needs based on the specified junction-to-ambient thermal resistance. Ensure the application voltage and current ratings remain within the absolute maximum limits defined in the datasheet.
The AO4722 belongs to Alpha & Omega Semiconductor's SRFET™ family, which integrates Schottky diodes into MOSFET structures. This design aims to reduce reverse recovery losses compared to standard body diodes. The part is designed for consumer market applications and is not authorized for use in life support devices without explicit authorization.
No direct substitute part numbers are explicitly confirmed in the provided source material.