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Product Detailed Parameters
- Description：MOSFET N-CH 30V 20A 8SOIC
- Series：SRFET™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：3800 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4726 is a low-voltage N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology and features a monolithically integrated Schottky diode to achieve excellent RDS(ON) and low gate charge. The device is housed in an 8-lead SOIC package with a copper lead frame and silver spot pads. Key electrical ratings include a drain-source voltage of 30V, continuous drain current of 13A at 25°C, and power dissipation of 2.0W at 25°C. The junction temperature range spans from -55°C to 150°C.
Feature Summary
- Advanced trench technology for optimized on-resistance and switching performance
- Monolithically integrated Schottky diode for enhanced efficiency
- Low gate charge characteristics suitable for high-speed applications
Applications
- Low side FET configurations in Switch Mode Power Supplies (SMPS)
- Load switching circuits
- General purpose power switching applications
Procurement Notes
Verify the specific revision status and manufacturing lot when sourcing components, as reliability data references specific production runs. Confirm compliance with RoHS standards and ensure the package variant matches design requirements. Review the manufacturer's quality assurance documentation regarding acceptable quality levels and outgoing defect rates prior to integration into final assemblies.
Selection Notes
Select this component for designs requiring a compact N-channel solution with an integrated body diode. The 30V rating and 13A continuous current capability suit various low-voltage power management tasks. Consider the thermal resistance values for heat sinking requirements in steady-state operations. Ensure the SOIC-8 footprint aligns with the printed circuit board layout constraints.
Part Context
This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, specifically designed for low-voltage applications. The AO4726 shares architectural similarities with other trench-based devices but distinguishes itself through the inclusion of a built-in Schottky diode. This integration reduces external component count and improves overall system efficiency compared to discrete solutions.
Replacement Considerations
Direct replacements must match the 30V N-channel specification and SOIC-8 package. Verify that substitute parts offer comparable RDS(ON) and gate charge values to maintain switching performance. Ensure any alternative includes similar thermal characteristics and integrates a compatible diode structure if required by the circuit topology.
