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Product Detailed Parameters
- Description：MOSFET N-CH 30V 20A 8SOIC
- Series：SRFET™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4463 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4728 is a 30V N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing SRFET™ trench technology with an integrated Schottky diode. It features a maximum drain-source voltage of 31V and continuous drain current of 20A at VGS=10V. On-resistance is less than 4.3mΩ at VGS=10V and 6mΩ at VGS=4.5V. The device supports a pulsed drain current of 146A and operates within a junction temperature range of -55°C to 150°C. It is housed in an SOIC-8 package.
Feature Summary
- Integrates a monolithic Schottky diode for low gate charge and excellent on-resistance
- Utilizes advanced SRFET™ trench technology for optimized switching performance
- Designed specifically as a low-side switch for CPU core power conversion applications
Applications
- Low side switching in CPU core power conversion
- Boost converters
- Synchronous rectifiers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and environmental compliance status. Ensure that the component matches the required thermal resistance characteristics for your specific board design, as junction-to-ambient values depend heavily on copper area and airflow conditions.
Selection Notes
Select this component when a 30V rating is sufficient and an integrated body diode is required for synchronous rectification or freewheeling duties. Consider the SOIC-8 package constraints and the specific RDS(ON) requirements at your operating gate voltage (4.5V vs 10V) to ensure adequate current handling capabilities.
Part Context
This part belongs to the AlphaSGT™ FET series by Alpha & Omega Semiconductor. It is designed to replace older discrete solutions by combining the MOSFET and Schottky barrier diode into a single surface-mount package, reducing footprint and improving thermal management in compact power supply designs.
Replacement Considerations
Direct substitutes must match the 30V/20A specification and SOIC-8 package. Verify pinout compatibility and thermal impedance curves before substitution.
