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Product Detailed Parameters
- Description：MOSFET N-CH 30V 15A 8SOIC
- Series：AlphaMOS
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：605 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4752 is an N-Channel AlphaMOS series MOSFET from Alpha & Omega Semiconductor Inc., designed for efficient power switching. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at 25°C. The device exhibits a maximum on-state resistance (Rds(on)) of 8.8mΩ at Vgs=10V, with a gate charge (Qg) of 5.5nC at 10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SO-8 surface-mount package.
Feature Summary
- Utilizes AlphaMOS technology for optimized power switching performance
- Low on-state resistance ensures high efficiency in conduction
- Fast switching characteristics supported by low gate charge
- Logic-level gate drive compatibility for direct interface
Applications
- DC-DC converter circuits
- Load switch applications
- Power management modules
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and electrical specifications. Confirm RoHS compliance status if required by your assembly process. Cross-reference the package marking code with the official documentation to prevent counterfeit components during sourcing.
Selection Notes
Select this component when a 30V N-channel MOSFET with low Rds(on) is required for compact designs. The SO-8 package suits space-constrained PCB layouts. Ensure the driving circuit can supply sufficient gate voltage to achieve the specified low resistance threshold for optimal thermal performance.
Part Context
This part belongs to the AlphaMOS family, which utilizes advanced trench gate technology. This series focuses on reducing conduction losses while maintaining fast switching speeds. The AO4752 specifically targets applications requiring reliable performance in moderate voltage environments with high current demands.
Replacement Considerations
Check for alternative N-channel MOSFETs with matching 30V Vdss and similar Rds(on) values. Verify that any substitute fits the SO-8 footprint and maintains comparable gate charge characteristics to preserve switching timing.
