AO4772

Description：MOSFET N-CH 30V 6A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:79ff59f05322 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：310 pF @ 15 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4772

Overview

The AO4772 is a 30V N-Channel MOSFET integrated with a Schottky diode in an SOIC-8 package. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The MOSFET provides a drain-source voltage of 30V, continuous drain current of 6A at VGS=10V, and RDS(ON) below 30mΩ at VGS=10V or 42mΩ at VGS=4.5V. The integrated Schottky diode supports a reverse voltage of 30V and forward current of 4A, with a forward voltage drop under 0.45V at 1A. The device is 100% UIS tested.

Feature Summary

Integrates a 30V N-Channel MOSFET with a complementary Schottky diode for bidirectional blocking switch applications.
Advanced trench technology ensures excellent on-resistance performance and low gate charge characteristics.
Includes a built-in Schottky diode to facilitate standard buck DC-DC conversion implementations.

Applications

Bidirectional blocking switches
Standard buck DC-DC conversion circuits

Procurement Notes

Verify the component matches the Alpha & Omega Semiconductor AO4772 datasheet specifications. Confirm the SOIC-8 package type and pinout configuration (Gate, Source, Anode, Cathode, Drain). Ensure the product meets RoHS compliance standards as indicated in the manufacturer documentation.

Selection Notes

Select this component for designs requiring a combined MOSFET and Schottky diode solution in a compact surface-mount package. Consider the thermal resistance values and power dissipation limits relative to the specific PCB copper area and ambient temperature conditions.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of power MOSFETs. It is designed for consumer market applications using advanced trench technology. The device integrates a Schottky barrier rectifier to simplify circuit design for synchronous rectification or bidirectional switching tasks.