SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO4800B is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. utilizing advanced trench technology. It features a drain-source voltage of 30V and a continuous drain current of 6.9A at VGS = 10V. The device offers low on-resistance, specified as less than 27mΩ at VGS = 10V, less than 32mΩ at VGS = 4.5V, and less than 50mΩ at VGS = 2.5V. It is Pb-free compliant with ROHS standards and includes tested UIS, gate resistance, and capacitance parameters.
The AO4800B belongs to the AO4800 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It is designed to provide a compact and efficient solution for power management circuits requiring low on-resistance and high current handling capabilities in a small footprint.
The AO4800BL is listed as a similar part number within the same product family. Verification of specific parameter differences between the 'B' and 'BL' suffixes is required before substitution.