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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.9A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A
- Rds On (Max) @ Id, Vgs：27mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：630pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4800 is a dual N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 30V, a continuous drain current of 6.9A at VGS=10V, and an on-resistance of less than 27mΩ at VGS=10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.
Feature Summary
- Dual N-channel configuration suitable for compact switch and synchronous rectifier applications
- Advanced trench technology providing excellent on-resistance and low gate charge
- Validated for 100% unclamped inductive switching (UIS) testing
Applications
- Buck converters
- Synchronous rectification circuits
- Power management modules
Procurement Notes
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the component meets all required electrical specifications for the intended application. Ensure compliance with applicable export control regulations and legal requirements during acquisition.
Selection Notes
Select this component based on its 30V rating and 6.9A current capability. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate the gate charge parameters for switching speed requirements in the target circuit design.
Part Context
This component belongs to the AO4800 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor Inc. It is designed for general-purpose power switching applications requiring high efficiency and compact packaging in surface-mount configurations.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs offering similar 30V ratings and SOIC-8 packages. Verify pinout compatibility and ensure equivalent or superior electrical parameters such as RDS(ON) and current handling capabilities.
FAQ
What is the maximum drain-source voltage for the AO4800?
The maximum drain-source voltage (BVDSS) is 30V.
Is the AO4800 tested for unclamped inductive switching?
Yes, the device is 100% tested for unclamped inductive switching (UIS).
What is the typical gate threshold voltage range?
The gate threshold voltage (VGS(th)) ranges from 0.7V to 1.5V under specified test conditions.
