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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 9A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A
- Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2600pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4805L_101 is a dual P-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -9A at VGS=-20V. The on-state resistance (RDS(ON)) is less than 15mΩ at VGS=-20V and less than 18mΩ at VGS=-10V. The device operates within a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2W at 25°C ambient temperature. It utilizes an SOIC-8 surface-mount package.
Feature Summary
- Dual P-channel configuration in a single compact package
- Advanced trench MOSFET technology for low on-resistance
- 100% tested for unclamped inductive switching (UIS)
- Suitable for load switch and battery protection applications
Applications
- Load switching circuits
- Battery protection systems
- Power management modules
Procurement Notes
Verify the specific ordering suffix '_101' against official Alpha & Omega Semiconductor documentation to confirm packaging details such as reel size or tape specifications. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the datasheet revision date to confirm electrical characteristics match your design specifications.
Selection Notes
Select this component when a dual P-channel solution is required for space-constrained designs. Evaluate thermal performance based on the junction-to-ambient resistance of 90°C/W in still air. Confirm that the gate drive voltage levels align with the specified RDS(ON) thresholds of -10V or -20V for optimal conduction efficiency.
Part Context
The AO4805 belongs to the AO48 series of dual MOSFETs from Alpha & Omega Semiconductor. This series is designed to provide high-density power solutions using advanced trench technology. The part integrates two independent P-channel devices into one package to reduce board space and simplify assembly compared to discrete components.
Replacement Considerations
Direct replacements include other 30V dual P-channel MOSFETs in SOIC-8 packages. Verify pinout compatibility and ensure equivalent RDS(ON) and current ratings. Check datasheets for matching thermal characteristics and UIS capabilities before substitution.
