AO4806L

Overview

The AO4806L is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation across a wide gate drive range from 1.8V to 12V. The device features a drain-source voltage of 20V and a continuous drain current of 9.4A at VGS=10V. On-resistance values are less than 14mΩ at 10V, 15mΩ at 4.5V, 21mΩ at 2.5V, and 30mΩ at 1.8V. It includes ESD protection rated at 2000V HBM and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Advanced trench technology provides excellent on-resistance and low gate charge for efficient switching performance.
• Wide gate drive range from 1.8V to 12V facilitates compatibility with various logic levels and control circuits.
• Common-drain configuration enables suitability as a uni-directional or bi-directional load switch.

Applications

• Uni-directional load switching
• Bi-directional load switching

Procurement Notes

Verify the component against official datasheets to confirm electrical parameters and package integrity. Ensure the ordering suffix matches specific environmental requirements, noting that the L suffix indicates a green product option electrically identical to the standard variant. Confirm compliance with RoHS and Sony 259 specifications during acquisition.

Selection Notes

Select this component for applications requiring low on-resistance across varying gate voltages. Consider the thermal characteristics and safe operating area when designing for high-current scenarios. Verify that the 20V drain-source voltage rating aligns with system supply constraints and that the SOIC-8 package fits the PCB layout requirements.

Part Context

The AO4806L belongs to the AO4806 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It shares electrical identity with the AO4806, differing primarily in environmental compliance options. The series is designed for consumer market applications utilizing advanced trench FET technology for improved power efficiency.

Replacement Considerations

AO4806 is electrically identical to AO4806L. Cross-referencing with other 20V dual N-channel MOSFETs requires verification of RDS(ON) thresholds at equivalent gate voltages and package pinout compatibility.

FAQ

Is the AO4806L electrically different from the AO4806?

No, the AO4806L and AO4806 are electrically identical. The L suffix denotes a Green Product ordering option.

What is the maximum junction temperature for the AO4806L?

The maximum junction temperature range is -55°C to 150°C.

Can the AO4806L function as a bi-directional switch?

Yes, its common-drain configuration makes it suitable for use as both a uni-directional and bi-directional load switch.