AO4812_101

AO4812_101

  • Description:MOSFET 2N-CH 30V 6A 8SOIC
  • Series:-

SKU:52c85e223451 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 6A 8SOIC
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:310pF @ 15V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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AO4812_101

Overview

The AO4812 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 30V, a continuous drain current of 6A at VGS=10V, and an on-resistance below 30mΩ at VGS=10V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.

Feature Summary

  • Dual N-channel configuration for compact switching applications
  • Advanced trench technology for low on-resistance
  • Low gate charge for efficient operation
  • 100% UIS tested for reliability

Applications

  • Buck converters
  • Synchronous rectifiers
  • Compact switch combinations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and thermal characteristics. Confirm RoHS compliance status if required for your assembly process. Check for any recent datasheet revisions that may impact electrical parameters or recommended operating conditions.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET with low RDS(ON) and high efficiency. Ensure the gate drive voltage meets the minimum requirements for optimal performance. Consider thermal management strategies based on the specified junction-to-ambient resistance values.

Part Context

The AO4812 belongs to the family of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It is designed for power management applications where space and efficiency are critical. The device integrates two independent channels in a single package to reduce board footprint.

Replacement Considerations

Direct replacements include AO4812A. Verify pin compatibility and electrical specifications before substitution.

FAQ

What is the maximum junction temperature for the AO4812?

The maximum junction temperature is 150°C.

Is the AO4812 suitable for synchronous rectification?

Yes, it is designed for use as a synchronous rectifier combination in buck converters.

What is the typical gate charge at VGS=10V?

The typical total gate charge (Qg) at VGS=10V is 6.3 nC.

AO4812_101AO4812_101

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