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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 7.1A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7.1A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1573pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4813L is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance characteristics. The device is rated for a drain-source voltage of -30V and supports a continuous drain current of -7.1A at a gate-source voltage of -10V. Maximum on-resistance is specified as less than 25mΩ at VGS = -10V and less than 40mΩ at VGS = -4.5V. The component is lead-free, compliant with ROHS and Sony 259 specifications, and housed in an 8-SOIC package.
Feature Summary
- Advanced trench technology for optimized performance
- Low gate charge capability
- Lead-free construction meeting environmental standards
Applications
- Load switch applications
- Pulse Width Modulation (PWM) control circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with RoHS and Sony 259 standards. Confirm that the requested variant matches the electrical requirements for load switching or PWM operations. Cross-reference the datasheet revision date to validate parameter accuracy before integration into design specifications.
Selection Notes
Select this component when a dual P-channel configuration is required for space-constrained designs. Ensure the operating voltage does not exceed the -30V rating. Verify that the gate drive voltage aligns with the specified thresholds for achieving the target on-resistance values in the application circuit.
Part Context
The AO4813L belongs to the AO4813 series from Alpha & Omega Semiconductor. The 'L' suffix denotes a green product ordering option that is electrically identical to the standard AO4813 part. Both variants utilize the same underlying trench MOSFET technology and share identical electrical specifications and pinouts.
Replacement Considerations
The AO4813L is electrically identical to the AO4813. Other dual P-channel MOSFETs with similar -30V ratings and SOIC-8 packages may serve as functional substitutes if their on-resistance and gate charge parameters meet the design requirements.
