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AO4818 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET 2N-CH 30V 8A 8SOIC. Review the specifications below when checking this part for your BOM.
The AO4818 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of 30V and a continuous drain current of 8A at VGS=10V. The maximum on-resistance is less than 19mΩ at VGS=10V and less than 23mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm packaging type and environmental compliance status. Ensure that any requested variants match the electrical specifications detailed in the datasheet. Confirm lead times and availability directly with authorized distributors or the manufacturer, as these factors are subject to change based on production schedules and supply chain conditions.
Select the AO4818 when a dual N-channel MOSFET with a 30V rating and 8A continuous current capability is required. Consider its low on-resistance characteristics for efficient power handling in load switch designs. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values provided in the datasheet for your specific board layout and operating environment.
The AO4818 belongs to the AO4818 family of dual N-channel MOSFETs from Alpha & Omega Semiconductor. It shares electrical characteristics with the AO4818L variant, which offers a green product ordering option. Both devices utilize similar trench technology for enhanced performance in compact surface-mount packages like the SOIC-8.
The AO4818L is electrically identical to the AO4818 but offers a different ordering suffix for environmental compliance. Other dual N-channel MOSFETs with similar voltage and current ratings may serve as alternatives if pin compatibility and electrical parameters align with the application requirements.
The maximum drain-source voltage (VDS) for the AO4818 is 30V.
Yes, the AO4818 is ESD protected and undergoes 100% UIS and Rg testing.
The typical total gate charge (Qg) at VGS=10V is 15nC, with a maximum of 18nC.
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