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The AO4821 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 3A at 25°C. The device has a maximum power dissipation of 1.4W and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.6V max at 250µA, a gate charge (Qg) of 9.2nC max at 10V, and an input capacitance (Ciss) of 450pF max at 30V. The on-resistance (Rds(on)) is 90mΩ max at 3A and 10V. It is housed in an 8-SOIC surface-mount package.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and electrical characteristics. Confirm component status as obsolete or active through authorized distributors before procurement planning. Request original manufacturer documentation to validate authenticity and technical specifications.
Select this component when a dual N-channel MOSFET with 60V rating and 3A current capacity is required in an 8-SOIC package. Ensure the application voltage and current remain within the specified limits of 60V Vdss and 3A Id. Verify that the logic level gate drive requirement aligns with the system's control signal voltage levels.
The AO4821 belongs to the AO48xx series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. This series is designed for general-purpose switching applications requiring compact packaging and efficient power handling. The part shares similar form factors with other devices in the AO48xx family but may differ in specific electrical parameters.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official documentation for recommended replacements or cross-reference guides.