AO4822_101

Overview

The AO4822 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and minimal gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of 30V and a continuous drain current of 8A at VGS=10V. On-state resistance is less than 19mΩ at VGS=10V and less than 26mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.

Feature Summary

• Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
• ESD protected with 100% UIS and Rg testing performed during manufacturing.
• Designed for use as a load switch or in pulse-width modulation applications.

Applications

• Load switching circuits
• Pulse-width modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with RoHS standards if required by the target application. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a dual N-channel MOSFET in an SOIC-8 footprint. Evaluate thermal performance based on the specific board copper area and ambient conditions, as junction-to-ambient resistance varies significantly with layout. Confirm that the 30V rating and 8A current capacity meet the peak and steady-state requirements of the intended circuit.

Part Context

The AO4822 belongs to the family of dual N-channel enhancement mode field effect transistors produced by Alpha & Omega Semiconductor Inc. These devices are engineered using trench technology to optimize conduction losses and switching efficiency. The product line targets cost-effective solutions for power management tasks requiring compact surface-mount packaging.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs in SOIC-8 packages with comparable 30V ratings and similar on-resistance values. Verify pinout compatibility and ensure equivalent thermal and electrical characteristics match the original design constraints.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ±20V.

Is the AO4822 tested for unclamped inductive switching?

Yes, the device undergoes 100% UIS testing as part of its manufacturing process.

What is the typical gate charge at 10V?

The typical total gate charge (Qg) at VGS=10V is 15nC.