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The AO4826 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and minimal gate charge, making it suitable for load switch and PWM applications. The device supports a drain-source voltage of 60V and a continuous drain current of 6.3A at VGS = 10V. Key electrical parameters include an RDS(ON) of less than 25mΩ at VGS = 10V and less than 30mΩ at VGS = 4.5V. It operates within a temperature range of -55°C to 175°C.
Verify the specific ordering suffix when purchasing. The standard AO4826 is lead-free and complies with ROHS standards. The AO4826L variant is designated as a Green Product but remains electrically identical to the standard version. Confirm package type and compliance documentation directly with the manufacturer or authorized distributor before finalizing procurement.
Select this component for designs requiring a dual N-channel MOSFET with a 60V rating. Ensure the gate drive voltage aligns with the specified RDS(ON) thresholds, specifically noting the performance difference between 10V and 4.5V drive levels. Verify thermal management requirements given the 175°C junction temperature capability.
This component belongs to the Alpha & Omega Semiconductor dual MOSFET family. It shares functional similarities with other dual N-channel devices like the AO4802, though voltage ratings differ. The AO4826 is distinct from single-channel variants and offers integrated dual functionality in a compact package.
Publicly confirmed substitute part numbers include FDS8926A, FDS8936A, and FDS9936A from Fairchild Semiconductor. Other potential equivalents found in public listings include CEM2108, AO4826-HF, and generic Dual N-Channel MOSFETs from VBsemi Electronics and Guangdong Youtai Semiconductors.