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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 6A 8SOIC
- Series：AlphaMOS
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 20V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4840E is a dual N-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 40V and a continuous drain current of 6A at VGS=10V. On-resistance is less than 28mΩ at VGS=10V and less than 35mΩ at VGS=4.5V. It includes typical ESD protection rated at HBM Class 2. The component is available in an SO-8 tape and reel package with a minimum order quantity of 3000 units.
Feature Summary
- Advanced trench technology for low RDS(ON) and low gate charge
- Typical ESD protection compliant with HBM Class 2 standards
- 100% tested for Unclamped Inductive Switching (UIS) capability
- RoHS and Halogen-Free compliant construction
Applications
- Buck converter circuits
- DC motor drive systems
- Load switch implementations
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the selected variant matches the required package type and form factor. Ensure compliance with applicable export control regulations and legal requirements during acquisition. Evaluate product suitability for intended applications independently.
Selection Notes
Select this component based on its 40V rating and 6A continuous current capacity. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the gate threshold voltage meets the logic level requirements of the driving circuit. Check the maximum junction temperature limits for the operating environment.
Part Context
This part belongs to the AlphaMOS series of dual N-channel MOSFETs. It shares the SO-8 surface mount package format with other devices in the family. The component is designed for general-purpose switching applications requiring moderate current handling capabilities.
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the verified source material. Consult official manufacturer documentation for potential cross-references or alternative components.
FAQ
What is the maximum junction temperature range?
The junction and storage temperature range is -55°C to 150°C.
Is the device tested for unclamped inductive switching?
Yes, the datasheet specifies that the device is 100% UIS tested.
What is the typical ESD protection rating?
The device offers typical ESD protection rated at HBM Class 2.
