AO4852L

Description：MOSFET 2N-CH 60V 3A 8SOIC
Series：-

SKU:a60bd99cec85 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3A
Rds On (Max) @ Id, Vgs：90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：450pF @ 30V
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4852L

Overview

The AO4852L is a dual N-channel logic-level MOSFET array manufactured by Alpha & Omega Semiconductor Inc. It features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 3A at 25°C. The device is housed in an 8-SOIC surface-mount package with a maximum power dissipation of 1.4W. Key electrical characteristics include a gate threshold voltage of 2.6V max at 250µA, a gate charge of 9.2nC max at 10V, and an input capacitance of 450pF max at 30V. The on-resistance is specified at 90mΩ max at 3A and 10V. Operating junction temperature ranges from -55°C to 150°C.

Feature Summary

Dual N-channel configuration within a single compact surface-mount package
Logic-level gate drive capability for direct interface with standard logic circuits
High thermal stability with extended operating junction temperature range

Applications

DC-DC converter synchronous rectification
Load switching applications
Power management circuits requiring dual channel isolation

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the specific ordering suffix matches design requirements. Check datasheet revisions for any parameter updates. Ensure storage conditions comply with moisture sensitivity level specifications. Validate supplier documentation against manufacturer standards before integration.

Selection Notes

Evaluate on-resistance at intended gate drive voltages to ensure efficiency. Consider thermal management strategies given the 1.4W power dissipation limit in the SOIC package. Verify that the 60V rating exceeds peak circuit voltages with adequate margin. Assess gate charge requirements against driver capabilities for switching speed optimization.

Part Context

This component belongs to the AO485 series of dual MOSFET arrays. It serves as a discrete solution for space-constrained designs requiring two independent N-channel switches. The 8-SOIC package offers a balance between pin count and board area efficiency compared to larger transistor packages.