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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10A
- Rds On (Max) @ Id, Vgs：13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1950pF @ 20V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4884L_001 is a dual N-channel MOSFET from Alpha & Omega Semiconductor Inc., utilizing advanced trench technology for low on-resistance and gate charge. It features a drain-source voltage of 40V, continuous drain current of 10A at VGS=10V, and RDS(ON) below 13mΩ at VGS=10V or 16mΩ at VGS=4.5V. The device operates within a junction temperature range of -55°C to 150°C, with maximum power dissipation of 2W. It includes 100% UIS and Rg testing.
Feature Summary
- Advanced trench technology provides excellent on-resistance characteristics combined with low gate charge requirements.
- Dual N-channel configuration allows for efficient integration in various power conversion applications.
- Comprehensive testing ensures reliability through 100% Unclamped Inductive Switching (UIS) and Gate Resistance verification.
Applications
- Power conversion circuits
- General purpose switching applications
Procurement Notes
Verify the specific suffix 'L_001' against official Alpha & Omega Semiconductor documentation to confirm exact packaging, tape-and-reel specifications, and environmental compliance status. Ensure the component matches the standard AO4884 electrical parameters if no distinct functional differences are documented.
Selection Notes
Select this component for designs requiring a 40V dual N-channel MOSFET with high current handling capabilities. Consider the thermal resistance values and package constraints when designing PCB layouts for optimal heat dissipation in power conversion systems.
Part Context
The AO4884 series represents a family of dual N-channel MOSFETs designed by Alpha & Omega Semiconductor. These devices leverage trench technology to achieve superior performance metrics compared to traditional planar structures, making them suitable for modern power management solutions.
Replacement Considerations
Potential substitutes include other 40V dual N-channel MOSFETs with similar RDS(ON) and current ratings. Verify pin compatibility and thermal characteristics before substitution.
FAQ
What is the maximum continuous drain current for the AO4884?
The maximum continuous drain current is 10A at VGS=10V.
Is the AO4884 tested for unclamped inductive switching?
Yes, the device undergoes 100% Unclamped Inductive Switching (UIS) testing.
What is the typical gate threshold voltage range?
The gate threshold voltage ranges from 1.5V to 2.7V at ID=250mA and VGS=0V.
