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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8SOIC
- Series：SRFET™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：15.8mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1885pF @ 15V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4924 is an asymmetric dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device integrates two MOSFETs, FET1 and FET2, with a monolithically integrated Schottky diode in parallel with the synchronous MOSFET (FET2) to enhance efficiency. Key electrical parameters include a drain-source voltage (VDS) of 30V for both channels. Continuous drain current (ID) is rated at 9A for FET1 and 7.3A for FET2 at VGS = 10V. Maximum RDS(ON) values are less than 15.8mΩ for FET1 and less than 24mΩ for FET2 at VGS = 10V. At VGS = 4.5V, maximum RDS(ON) is less than 19.5mΩ for FET1 and less than 29mΩ for FET2.
Feature Summary
- Asymmetric dual N-channel configuration optimized for compact switching applications
- Monolithically integrated Schottky diode across the synchronous MOSFET to boost converter efficiency
- Advanced trench technology providing excellent on-resistance and low gate charge characteristics
Applications
- DC-DC converters
- Synchronous rectifier combinations
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet revisions match design requirements. Ensure storage conditions comply with moisture sensitivity levels specified in the package information. Validate pinout compatibility during PCB layout finalization before assembly.
Selection Notes
Select this component for designs requiring asymmetric current handling within a dual MOSFET structure. The integrated Schottky diode reduces external component count compared to discrete solutions. Evaluate thermal performance based on the specific RDS(ON) values at expected operating gate voltages. Consider the 30V rating when designing for low-voltage power supply rails.
Part Context
This part belongs to the AO49xx series of asymmetric dual N-channel MOSFETs from Alpha & Omega Semiconductor. These devices are engineered specifically for high-efficiency power management applications where space constraints and switching speed are critical factors. The integration of the body diode alternative allows for simplified circuit topologies in modern DC-DC conversion systems.
Replacement Considerations
Direct substitutes include AO4912, AO4918, and AO4918A from the same manufacturer family. Verify pinout and electrical parameter alignment before substitution.
