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The AO5404E is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, supporting operation with gate voltages as low as 1.8V. The device is housed in a SC-89-3 surface mount package. Key electrical ratings include a Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 500mA. The maximum power dissipation is specified at 280mW (Ta). The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific manufacturer documentation for the AO5404E to confirm current production status, as some sources indicate this part may be obsolete or discontinued. Ensure that any substitute components meet the original 20V VDS and 500mA ID requirements. Check for RoHS compliance if required by your manufacturing standards. Confirm the SC-89-3 package dimensions match your PCB footprint design before finalizing procurement decisions.
Select the AO5404E when a compact N-channel MOSFET with low gate drive voltage is required. Its 20V rating suits low-voltage logic interfaces. The SC-89-3 package offers space savings for dense layouts. Consider thermal constraints due to the 280mW dissipation limit. Verify that the 500mA current capacity meets the load requirements of the specific circuit application.
Alpha & Omega Semiconductor specializes in discrete semiconductors using trench technology. The AO5404E belongs to their portfolio of single FETs designed for efficiency. This component type is commonly used in consumer electronics and battery management systems where small form factors and low power consumption are critical design parameters.
Publicly confirmed substitute part numbers for the AO5404E were not found in the provided source material.