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The AO5404EL is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of 20V and a continuous drain current of 0.5A at VGS=4.5V. Electrical characteristics include RDS(ON) values below 0.55Ω at VGS=4.5V, 0.68Ω at VGS=2.5V, and 0.80Ω at VGS=1.8V. It is housed in an SC89-3L package.
Verify the specific ordering suffix against manufacturer documentation to confirm compliance attributes. The AO5404EL variant is designated as Halogen Free, while the standard AO5404E is RoHS compliant. Confirm that electrical specifications match the required circuit parameters before procurement, as the L suffix denotes environmental compliance rather than functional differences.
Select this component for applications requiring low-voltage gate drive compatibility down to 1.8V. The device is appropriate for load switching and PWM tasks where moderate current handling around 0.5A is sufficient. Ensure the thermal design accounts for the high junction-to-ambient thermal resistance typical of small surface-mount packages.
This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, designed primarily for consumer electronics. The AO5404E and AO5404EL are electrically identical, with the EL suffix indicating Halogen Free status. The product is qualified for the consumer market and is not authorized for use in life support devices or systems.
AO5404E
No, the AO5404E and AO5404EL are electrically identical. The difference lies in environmental compliance, with the AO5404EL being Halogen Free.
The device supports operation with gate voltages as low as 1.8V, making it suitable for low-voltage logic interfaces.