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The AO6405 is a 30V P-Channel MOSFET utilizing advanced trench technology for low gate charge and excellent RDS(ON). It operates with a continuous drain current of -5A at VGS=-10V and -4.2A at VGS=-4.5V. On-resistance is less than 52mΩ at VGS=-10V and 87mΩ at VGS=-4.5V. The device features a maximum junction temperature of 150°C, a breakdown voltage of -30V, and a pulsed drain current of -20A. It is housed in a TSOP6 package.
Verify the specific datasheet revision (Rev 5.1) matches your design requirements. Confirm thermal performance assumptions align with your PCB copper area and airflow conditions, as junction-to-ambient resistance varies significantly based on board layout. Ensure static and dynamic electrical parameters meet circuit constraints before finalizing procurement.
Select this component when a 30V P-Channel MOSFET with low gate charge is required for efficient switching. Consider the TSOP6 package size for space-constrained designs. Evaluate thermal dissipation capabilities against your specific ambient temperature and board copper specifications to ensure reliable operation within the 150°C junction limit.
Alpha & Omega Semiconductor manufactures power management solutions including MOSFETs. The AO6405 belongs to their P-Channel MOSFET lineup, designed for general-purpose switching applications. The company emphasizes trench technology for improved efficiency and lower gate drive requirements in consumer and industrial electronics.
Check pinout compatibility and electrical ratings if substituting. Verify that alternative components offer equal or superior RDS(ON) and gate charge characteristics. Ensure the replacement package matches the TSOP6 footprint for direct board integration without redesigning traces.
The maximum continuous drain current is -5A at VGS=-10V and -4.2A at VGS=-4.5V.
The total gate charge (Qg) at VGS=-10V is typically 9.2nC and maximally 11nC.