SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO6602 is a complementary MOSFET array from Alpha & Omega Semiconductor, integrating N-Channel and P-Channel enhancement mode transistors in a TSOP-6 package. The N-Channel device supports a drain-source voltage of 30V with a continuous drain current of 3.5A at VGS=10V, featuring an on-resistance below 50mΩ. The P-Channel counterpart handles -30V and -2.7A, with on-resistance under 100mΩ at VGS=-10V. Both channels utilize advanced trench technology to minimize gate charge and switching losses. The component operates within a junction temperature range of -55°C to +150°C and offers a maximum power dissipation of 1.15W.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical tolerances and packaging variations. Ensure that any requested variants match the required thermal characteristics and pinout configurations defined in the datasheet before finalizing procurement orders.
Select this component for applications requiring a compact complementary pair with low switching losses. Evaluate the thermal resistance parameters relative to the specific PCB copper area and airflow conditions to ensure the junction temperature remains within the specified operational limits during peak load cycles.
This part belongs to the Alpha & Omega Semiconductor complementary MOSFET family, designed for general-purpose switching applications. It serves as a direct replacement for other industry-standard 30V dual MOSFETs in space-constrained designs where low RDS(ON) and fast switching speeds are critical performance factors.
Verify pin compatibility and absolute maximum ratings when substituting. Confirm that alternative parts meet the same TSOP-6 footprint and thermal dissipation requirements to maintain circuit integrity without redesigning the board layout.