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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.5A 6TSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta), 2.7A (Ta)
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA, 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 10V, 5.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：210pF @ 15V, 240pF @ 15V
- Power - Max：1.15W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：-
- Qualification：-
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Overview
The AO6602_DELTA is a surface-mount complementary enhancement mode field effect transistor array manufactured by Alpha & Omega Semiconductor Inc. It integrates N-channel and P-channel MOSFETs in a single package, utilizing advanced trench technology to achieve low on-resistance and gate charge. The device supports a drain-source voltage of 30V for both channels. Continuous drain current ratings are specified at 3.1A for the N-channel and -2.7A for the P-channel at VGS = ±10V. On-resistance is less than 75mΩ for the N-channel and less than 100mΩ for the P-channel at VGS = ±10V. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single surface-mount package
- Utilizes advanced trench technology for enhanced performance
- Designed for high-speed power inverter applications
Applications
- High-speed power inverters
- Motor control circuits
- Power management modules
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as the standard product meets specifications. Check for availability of the AO6602L variant if green product ordering options are required. Ensure storage conditions align with semiconductor handling standards to maintain device integrity prior to assembly.
Selection Notes
Select this component when a compact solution for complementary switching is required. The integrated design reduces board space compared to discrete pairs. Consider the specific on-resistance requirements at 4.5V and 10V gate drive voltages. Verify that the 30V voltage rating suits the target circuit application. Evaluate thermal management needs based on the specified power dissipation limits.
Part Context
The AO6602_DELTA belongs to the family of complementary MOSFET arrays from Alpha & Omega Semiconductor. It serves as a discrete semiconductor product designed for efficient power switching. The device is electrically identical to the AO6602L, differing primarily in environmental packaging options. It represents a standard product line optimized for cost-effective and space-constrained electronic designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The AO6602_DELTA is listed as obsolete in some distributor records. Engineers should consult official manufacturer resources for current equivalent recommendations or updated series replacements.
