AO6701

$0.12

Description：MOSFET P-CH 30V 2.3A 6TSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:4623dcfc9665 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 2.3A 6TSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：135mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.9 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：409 pF @ 15 V
FET Feature：Schottky Diode (Isolated)
Power Dissipation (Max)：1.15W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-TSOP
Package / Case：SC-74, SOT-457

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AO6701

Overview

The AO6701 is a P-Channel MOSFET integrated with a Schottky diode in a TSOP6 package. It features a Drain-Source Voltage (VDS) of -30V and a Continuous Drain Current (ID) of -2.3A at VGS=-10V. The device offers low on-resistance, specified as less than 135mΩ at VGS=-10V, less than 185mΩ at VGS=-4.5V, and less than 265mΩ at VGS=-2.5V. The integrated Schottky diode provides a Reverse Voltage (VR) of 20V and a Continuous Forward Current (IF) of 1A. Thermal characteristics include a maximum junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench technology delivers excellent RDS(ON) performance and low gate charge for efficient switching.
Integrated Schottky diode facilitates bidirectional blocking switch implementation and DC-DC conversion applications.

Applications

Bidirectional blocking switches
DC-DC conversion circuits

Procurement Notes

Verify the specific datasheet revision and manufacturer lot codes upon receipt. Confirm that the component matches the AO6701 designation and TSOP6 package outline. Ensure storage conditions remain within the specified temperature range to maintain device integrity prior to assembly.

Selection Notes

Select this component when a compact solution combining a P-Channel MOSFET and a Schottky barrier rectifier is required. The integrated design reduces board space compared to discrete components. Evaluate thermal management requirements based on the application's power dissipation and ambient temperature constraints.

Part Context

Manufactured by Alpha & Omega Semiconductor, the AO6701 utilizes trench technology to optimize conduction losses and switching speeds. The integration of the Schottky diode addresses body-diode limitations in synchronous rectification or freewheeling scenarios, offering a streamlined alternative to separate discrete parts.