SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO6800L is a dual N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) rated at 6A. The device utilizes a 6-TSOP surface-mount package. Key electrical parameters include a maximum gate threshold voltage of 1V at 250µA, a maximum gate charge of 17.2nC at 10V, and an input capacitance of 1450pF at 10V. The component operates within a junction temperature range of -55°C to 150°C.
Verify the obsolete status and availability through authorized distributors. Confirm package integrity upon receipt. Ensure ESD handling protocols are followed during storage and assembly. Cross-reference datasheet revisions to confirm parameter consistency with design requirements.
Select this component for low-voltage applications requiring dual N-channel integration. Evaluate thermal performance against the 6A rating. Consider the 30V Vdss limit for circuit voltage headroom. Compare gate charge specifications against driver capabilities for optimal switching speed.
This part belongs to the Alpha & Omega Semiconductor discrete transistor family. It serves as a dual FET solution within their MOSFET array portfolio. The manufacturer specializes in power semiconductors for industrial and consumer electronics.
The maximum drain-source voltage (Vdss) is 30V.
Yes, the AO6800L is lead-free and RoHS compliant.