AO6801E

AO6801E

  • Description:MOSFET 2P-CH 30V 2A 6TSOP
  • Series:-

SKU:176d62bd66c8 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 2A 6TSOP
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:2A
  • Rds On (Max) @ Id, Vgs:110mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:305pF @ 15V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:6-TSOP
  • Grade:-
  • Qualification:-

Download product information

AO6801E

Overview

The AO6801E is a dual P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and minimal gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of -30V and a continuous drain current of -2.3A at VGS = -10V. On-resistance values are specified as less than 135mΩ at VGS = -10V, less than 185mΩ at VGS = -4.5V, and less than 265mΩ at VGS = -2.5V. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

  • Dual P-Channel Configuration
  • Advanced Trench Technology
  • Low Gate Charge
  • ESD Protected

Applications

  • Load Switches
  • PWM Applications

Procurement Notes

Verify the specific suffix 'E' against official manufacturer documentation to confirm if it denotes a specific tape and reel packaging variant or environmental compliance status distinct from the standard AO6801. Ensure the component matches the RoHS and Sony 259 specifications required for your assembly process.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage switching. The low gate charge supports efficient PWM operation. Verify that the -30V rating and -2.3A current capacity align with the circuit's maximum operating conditions and thermal requirements.

Part Context

This part belongs to the AO6801 series of dual P-channel MOSFETs. The base model AO6801 is electrically identical to the AO6801L green product option. The AO6801E likely represents a specific packaging or compliance variation within this family, sharing the same core electrical characteristics defined by the manufacturer's trench technology design.

Replacement Considerations

AO6801

FAQ

Is the AO6801E Pb-free?

Yes, the standard AO6801 series meets RoHS and Sony 259 specifications for lead-free construction.

What is the maximum gate-source voltage rating?

The datasheet specifies a maximum gate-source voltage (VGS) rating of ±12V.

How does the on-resistance vary with gate voltage?

RDS(ON) increases as gate voltage decreases: <135mΩ at -10V, <185mΩ at -4.5V, and <265mΩ at -2.5V.

AO6801EAO6801E

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