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The AO6804 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. The device features a common-drain configuration within a TSOP-6 package. Key electrical parameters include a drain-source voltage of 20V, a continuous drain current of 5.0A at VGS=4.5V, and a maximum power dissipation of 1.3W. Thermal characteristics specify a junction-to-ambient thermal resistance of 118°C/W in still air.
Verify the specific revision status and RoHS compliance documentation prior to integration. Confirm that the component meets Sony 259 specifications if required by the design. Ensure the procurement channel provides valid traceability records for this consumer-grade part.
Select the AO6804 when a dual N-channel MOSFET with low gate drive requirements is needed. Verify that the 20V breakdown voltage and 5A current rating align with the circuit's peak loads. Consider the TSOP-6 package constraints for PCB layout and thermal management strategies.
The AO6804 belongs to the AO680 series of dual N-channel MOSFETs from Alpha & Omega Semiconductor. This series focuses on providing cost-effective solutions for consumer electronics and portable devices requiring efficient power management in small form factors.
Direct substitutes are not explicitly listed in the provided datasheet. Evaluate other dual N-channel MOSFETs from the same manufacturer with similar VDS, ID, and RDS(ON) specifications for potential cross-referencing.