AO6804A

Overview

The AO6804A is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It features a 20V drain-source voltage (BVDSS) and supports a continuous drain current of 5A at 25°C. The device utilizes advanced trench technology to achieve low on-resistance, with RDS(ON) values ranging from 18mΩ to 39mΩ depending on the gate-source voltage (VGS) between 4.5V and 2.5V. Key dynamic parameters include a maximum total gate charge (Qg) of 7.5nC at VGS=4.5V and an input capacitance (Ciss) of 225pF at VDS=10V. The component operates within a junction temperature range of -55°C to 150°C and is housed in a TSOP-6 surface-mount package.

Feature Summary

• Dual N-channel configuration with common-drain topology suitable for load switch applications
• Advanced trench technology providing low gate charge and enhanced switching performance
• Logic-level gate drive capability allowing operation with gate voltages as low as 2.5V

Applications

• Load switch circuits
• Consumer electronics power management
• Battery-powered devices

Procurement Notes

Verify the specific manufacturing revision and date code against the latest Alpha & Omega Semiconductor datasheet before integration. Confirm that the TSOP-6 package dimensions align with the target PCB footprint. Ensure thermal design accounts for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage logic interfaces. The low gate charge facilitates faster switching speeds compared to standard planar technologies. Evaluate the RDS(ON) requirements against the available gate drive voltage to ensure sufficient current handling capabilities for the specific load application.

Part Context

The AO6804A belongs to the AO680 series of dual MOSFETs from Alpha & Omega Semiconductor. This series is designed for consumer market applications requiring small form factors and efficient power switching. The device shares architectural similarities with other low-voltage trench MOSFETs but is distinct in its specific pinout and electrical ratings tailored for TSOP-6 packaging.

Replacement Considerations

Direct substitutes must match the 20V VDS, 5A ID rating, and TSOP-6 package. Verify that alternative components offer comparable RDS(ON) at the intended VGS levels and similar gate charge characteristics to maintain switching performance.