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The AO6808 is a dual N-channel MOSFET from Alpha & Omega Semiconductor Inc. housed in a TSOP-6 package. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 6A at VGS = 4.5V. The typical on-resistance (RDS(ON)) values are 19mΩ at VGS = 4.5V, 20mΩ at VGS = 4.0V, 21mΩ at VGS = 3.1V, and 23mΩ at VGS = 2.5V. The device features a maximum junction temperature range of -55°C to 150°C.
Verify the component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm the package type is TSOP-6 and the part number matches AO6808 exactly. Ensure the supplier provides traceability documentation consistent with Alpha & Omega Semiconductor Inc. standards before finalizing acquisition.
Select this component when a dual N-channel MOSFET with a 20V rating and 6A continuous current capability is required. Consider the low RDS(ON) characteristics at various gate voltages for efficiency optimization. Verify that the thermal requirements align with the specified junction-to-ambient resistance values for the intended PCB layout.
The AO6808 belongs to the AO680 series of dual N-channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. This series is designed for consumer market applications requiring efficient power switching in small form factors. The device leverages trench technology to deliver high performance relative to its physical size.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official distributor databases or manufacturer cross-reference lists for verified alternatives.
The AO6808 supports operation with gate voltages as low as 2.5V.
The typical RDS(ON) is 19mΩ when VGS is 4.5V and ID is 6.0A.
Yes, the AO6808 is ESD protected.