AO7401L

Overview

The AO7401L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent RDS(ON) and ultra-low gate charge, rated for a 25V gate voltage. The device supports a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -9A at VGS = -10V. Key electrical parameters include an on-resistance of less than 14mΩ at VGS = -10V and less than 36mΩ at VGS = -4.5V.

Feature Summary

• Advanced trench technology ensures low on-resistance and minimal gate charge.
• Designed for high-efficiency switching applications with robust thermal performance.
• Electrically identical to the AON7401 variant.

Applications

• Load switch implementations
• Pulse Width Modulation (PWM) control circuits

Procurement Notes

Verify the specific suffix 'L' against the manufacturer's datasheet to confirm halogen-free status or packaging variations. Ensure the component matches the AON7401 electrical specifications if substituting. Confirm RoHS compliance and REACH registration status prior to integration into regulated supply chains.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low drive requirements. The low gate charge facilitates faster switching speeds in PWM applications. Verify that the -30V rating aligns with the system's maximum voltage stress and that the -9A current capacity meets the load demands under the intended operating temperature conditions.

Part Context

This part belongs to the AOS P-Channel MOSFET family, which emphasizes efficiency through trench technology. The AO7401L shares electrical characteristics with the AON7401, offering designers flexibility in sourcing while maintaining consistent performance metrics for power management and signal switching tasks.

Replacement Considerations

The AON7401 is electrically identical to the AO7401L. Verify package compatibility when swapping between these variants.