AO7403

Overview

The AO7403 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V within a small SOT323 footprint. The device features a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -0.7A at VGS = -4.5V. On-resistance is specified as less than 470mΩ at VGS = -4.5V, less than 625mΩ at VGS = -2.5V, and less than 900mΩ at VGS = -1.8V.

Feature Summary

• Advanced trench technology for superior on-resistance and low gate charge
• Compatible with low gate drive voltages down to 1.8V
• ESD protection rated at 2kV Human Body Model

Applications

• Load switching
• Low current inverters
• Low current DC-DC converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The standard AO7403 is Pb-free and meets ROHS specifications. An alternative AO7403L variant exists as a Green Product option; both are electrically identical but may differ in environmental compliance documentation or packaging details. Confirm package type and lead-free status with the supplier prior to order placement.

Selection Notes

Select this component for applications requiring compact surface-mount solutions with low gate drive requirements. The SOT323 package suits space-constrained designs. Ensure the circuit operates within the -20V drain-source voltage limit and that the load current does not exceed the -0.7A rating at the intended gate voltage.

Part Context

This part belongs to the P-Channel Enhancement Mode Field Effect Transistor family from Alpha & Omega Semiconductor. It is designed for general-purpose switching applications where low on-resistance and fast switching speeds are required in a minimal footprint.

Replacement Considerations

AO7403L is an electrically identical alternative offering Green Product compliance.