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The AO7415 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It features a maximum drain-source voltage of 20V and supports continuous drain currents up to 8A at ambient temperature or 32A at case temperature. The device exhibits a low on-resistance of 16 milliohms when driven by a gate-source voltage of 10V, ensuring efficient power handling. Designed for surface-mount applications, it utilizes an 8-Lead PowerTDFN package with dimensions of 3x3mm. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific manufacturer datasheet revision to confirm exact electrical parameters and thermal characteristics before finalizing designs. Ensure that the ordering information matches the required tape and reel specifications for automated assembly processes. Cross-reference the package outline drawings to guarantee mechanical compatibility with existing PCB footprints and soldering profiles.
Select this component for applications requiring a 20V P-Channel MOSFET with low on-resistance. Consider the 8A continuous current rating relative to thermal dissipation constraints in the target enclosure. Evaluate the 3x3mm PowerTDFN footprint against available board space and verify that the gate drive voltage levels are sufficient to fully enhance the channel for optimal performance.
This part belongs to the AO74xx series of P-Channel MOSFETs from Alpha & Omega Semiconductor. These components are engineered for general-purpose power switching tasks in mobile and computing platforms. The series emphasizes small form factors and robust thermal performance to meet the demands of modern miniaturized electronic devices.
AO7413
The maximum drain-source voltage (Vds) is rated at 20V.
The on-resistance (Rds(on)) is typically 16 milliohms when the gate-source voltage is 10V.