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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.9A SC70-6
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：900mA, 600mA
- Rds On (Max) @ Id, Vgs：300mOhm @ 900mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：120pF @ 10V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The AO7600 is a complementary pair of N-Channel and P-Channel Logic Level Gate FETs manufactured by Alpha & Omega Semiconductor Inc. utilizing advanced trench MOSFET technology. It features a maximum drain-source voltage of 20V for the N-channel and -20V for the P-channel. The continuous drain current ratings are 900mA for the N-channel and 600mA for the P-channel, with a total power dissipation of 300mW. The device is housed in a compact SC-70-6 surface-mount package.
Feature Summary
- Complementary N/P-Channel configuration for efficient half-bridge or full-bridge driver applications
- Advanced trench MOSFET technology providing low on-resistance and reduced gate charge
- Logic level gate drive capability suitable for direct connection to standard logic outputs
Applications
- DC-DC converter circuits requiring complementary switching elements
- Motor control interfaces for small DC motors
- Low-voltage load switching applications
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the received parts match the specific AO7600 designation and packaging type. Check datasheets for any recent product change notices regarding pinout or electrical characteristics before final integration into designs.
Selection Notes
Select this component for low-voltage applications requiring a matched N/P pair in a minimal footprint. Ensure the design operates within the 20V limit and accounts for the 300mW thermal dissipation constraint. Consider thermal management strategies if operating near maximum current ratings.
Part Context
This part belongs to the discrete semiconductor category, specifically within the field-effect transistor family. It serves as a fundamental building block for power management and signal switching circuits where space efficiency and logic compatibility are critical requirements for system designers.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult official manufacturer resources for potential obsolescence management or equivalent alternative device recommendations.
