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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 4.5A 8TSSOP
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：42mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：905pF @ 10V
- Power - Max：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The AO8801A is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a Drain-Source Voltage (VDS) of -20V and a continuous drain current (ID) of -4.5A at VGS=-10V. Key electrical parameters include an RDS(ON) of less than 42mΩ at VGS=-4.5V, less than 54mΩ at VGS=-2.5V, and less than 68mΩ at VGS=-1.8V. It is housed in an 8-pin TSSOP package and includes ESD protection.
Feature Summary
- Dual P-Channel configuration within a single compact surface-mount package
- Advanced trench technology for optimized on-resistance and switching performance
- Capable of direct logic-level control with gate voltages down to 1.8V
- Integrated electrostatic discharge (ESD) protection
Applications
- Load switch applications
- Pulse Width Modulation (PWM) circuits
- Low-side power management
Procurement Notes
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and environmental compliance status. Ensure that any assumed functional differences based solely on suffix variations are validated through the manufacturer's official datasheet or product change notices before procurement.
Selection Notes
Select this component when a dual P-channel MOSFET solution is required for space-constrained designs. The device is appropriate for applications requiring low gate drive voltage compatibility and efficient power switching. Evaluate thermal constraints carefully, as the junction-to-ambient resistance is highly dependent on the PCB copper area and airflow conditions.
Part Context
The AO8801A belongs to the AO8801 family of dual P-Channel MOSFETs from Alpha & Omega Semiconductor. This series is designed to provide high-density switching capabilities in small form factors. The AO8801A specifically targets cost-sensitive and space-limited electronic systems requiring reliable dual-channel power control.
Replacement Considerations
The AO8801L is electrically identical to the AO8801A according to manufacturer specifications. Verify pinout compatibility and package dimensions before substituting with other dual P-channel MOSFETs from different manufacturers.
