AO8818

$0.25

Description：MOSFET 2N-CH 30V 8TSSOP
Series：-

SKU:30310e2e9813 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8TSSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：18mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 15V
Power - Max：1.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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AO8818

Overview

The AO8818 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. utilizing advanced trench technology. It features a 30V drain-source voltage rating and a continuous drain current of 7A at a gate-source voltage of 10V. The device offers a maximum on-resistance of less than 18mΩ at 10V and less than 20mΩ at 4.5V. It operates with gate voltages as low as 2.5V while maintaining a 12V maximum gate-source voltage rating. The component is electrostatic discharge protected and available in lead-free packaging compliant with RoHS standards.

Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
Common-drain configuration facilitates use as a uni-directional or bi-directional load switch.
Operates effectively with gate voltages as low as 2.5V.