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The AO9926BL is a dual N-channel enhancement mode MOSFET from Alpha & Omega Semiconductor, packaged in an SOIC-8. It utilizes advanced trench technology to achieve low on-resistance and gate charge while supporting operation with gate voltages as low as 1.8V. The device maintains a maximum VGS rating of 12V and offers a drain-source breakdown voltage (BVDSS) of 20V. Key electrical parameters include a continuous drain current (ID) of 7.6A at VGS=10V, with RDS(ON) values below 23mΩ at 10V, 26mΩ at 4.5V, 34mΩ at 2.5V, and 52mΩ at 1.8V.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance with RoHS and Sony 259 specifications. Ensure that the procurement channel provides genuine components directly traceable to Alpha & Omega Semiconductor to avoid counterfeit parts. Confirm package type and thermal characteristics match the intended PCB layout requirements before finalizing orders.
Select this component when low gate drive voltage compatibility is required alongside high efficiency. The device supports VGS levels of 1.8V, 2.5V, 4.5V, and 10V, making it adaptable to various logic families. Evaluate the thermal resistance (RqJA) based on the specific copper area and airflow conditions of the target application board to ensure junction temperature limits are not exceeded during steady-state or pulsed operation.
The AO9926BL is part of the AO9926 series manufactured by Alpha & Omega Semiconductor. It shares identical electrical characteristics with the AO9926B model. The BL suffix indicates a green product ordering option that meets RoHS and Sony 259 specifications, distinguishing it from standard lead-free variants while maintaining functional equivalence.
The AO9926B is electrically identical to the AO9926BL and serves as a direct functional substitute. Other dual N-channel MOSFETs with similar 20V ratings and SOIC-8 packages may be considered if their RDS(ON) and gate charge specifications meet or exceed the AO9926BL performance metrics.