AOB12N50L

AOB12N50L

  • Description:MOSFET N-CH 500V 12A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:c469820eb01b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 500V 12A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:520mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1633 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB12N50L

Overview

The AOB12N50L is a 500V N-Channel MOSFET in a TO-263 (D2PAK) package. It features a maximum continuous drain current of 12A at TC=25°C and a pulsed drain current of 48A. The on-resistance is less than 0.52Ω at VGS=10V. Key electrical parameters include a gate threshold voltage of 3.3V to 4.5V, total gate charge of 37nC, input capacitance of 1361pF, and reverse transfer capacitance of 12.6pF. Thermal resistance from junction-to-case is 0.5°C/W.

Feature Summary

  • Advanced high-voltage MOSFET process designed for robust performance in AC-DC applications.
  • Guaranteed avalanche capability with 100% UIS testing.
  • Optimized low RDS(on), Ciss, and Crss characteristics.
  • Halogen-free construction available via the 'L' suffix.

Applications

  • Offline power supply designs
  • AC-DC converter circuits

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm physical package type and halogen-free status. Confirm that the component meets consumer market qualification standards as specified in the datasheet. Ensure design constraints align with the absolute maximum ratings provided for thermal and electrical limits.

Selection Notes

Select this component for offline power supply designs requiring high ruggedness and avalanche capability. Consider the TO-263 package for surface-mount assembly with heatsinking capabilities. Evaluate thermal management requirements based on the 0.5°C/W junction-to-case resistance and derating curves for continuous operation.

Part Context

This part belongs to the AOT/AOB series of high-voltage N-channel MOSFETs manufactured by Alpha & Omega Semiconductor. It shares core electrical specifications with the AOT12N50 but utilizes a different package configuration suitable for surface-mount applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the source material.

AOB12N50LAOB12N50L

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