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The AOB12N50L is a 500V N-Channel MOSFET in a TO-263 (D2PAK) package. It features a maximum continuous drain current of 12A at TC=25°C and a pulsed drain current of 48A. The on-resistance is less than 0.52Ω at VGS=10V. Key electrical parameters include a gate threshold voltage of 3.3V to 4.5V, total gate charge of 37nC, input capacitance of 1361pF, and reverse transfer capacitance of 12.6pF. Thermal resistance from junction-to-case is 0.5°C/W.
Verify the specific ordering suffix against manufacturer documentation to confirm physical package type and halogen-free status. Confirm that the component meets consumer market qualification standards as specified in the datasheet. Ensure design constraints align with the absolute maximum ratings provided for thermal and electrical limits.
Select this component for offline power supply designs requiring high ruggedness and avalanche capability. Consider the TO-263 package for surface-mount assembly with heatsinking capabilities. Evaluate thermal management requirements based on the 0.5°C/W junction-to-case resistance and derating curves for continuous operation.
This part belongs to the AOT/AOB series of high-voltage N-channel MOSFETs manufactured by Alpha & Omega Semiconductor. It shares core electrical specifications with the AOT12N50 but utilizes a different package configuration suitable for surface-mount applications.
Public confirmed substitute part numbers are not available in the source material.