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Product Detailed Parameters
- Description：MOSFET N-CH 650V 15A TO263
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：290mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：841 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：208W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB15S65L is an N-channel silicon MOSFET from Alpha & Omega Semiconductor’s aMOS™ series, designed for surface-mount applications in the TO-263 (D2PAK) package. It features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 15 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 290 mΩ at 10 V gate drive and 7.5 A. Key electrical parameters include a maximum gate charge of 17.2 nC, input capacitance of 841 pF, and a threshold voltage of 4 V. It supports a power dissipation of 208 W and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced aMOS™ technology for high-performance switching
- Surface-mount TO-263 package for efficient thermal management
- High breakdown voltage capability for robust operation
Applications
- Power supply circuits
- Motor control systems
- Industrial automation equipment
Procurement Notes
Verify the specific datasheet version and ordering information directly with Alpha & Omega Semiconductor or authorized distributors. Confirm that the TO-263 package variant matches your PCB footprint requirements. Ensure compliance with RoHS standards if applicable. Cross-reference part numbers carefully to distinguish between through-hole and surface-mount equivalents within the same product family.
Selection Notes
Select this component when a surface-mount solution is required for high-voltage switching applications. The TO-263 package offers better thermal performance than smaller packages while maintaining a compact footprint compared to through-hole options. Consider the 290 mΩ Rds(on) for efficiency calculations at 7.5 A load currents. Evaluate the 17.2 nC gate charge for driver compatibility in high-frequency switching scenarios.
Part Context
This device belongs to the aMOS™ series of N-channel MOSFETs from Alpha & Omega Semiconductor. It shares core specifications with the through-hole AOT15S65L but utilizes a surface-mount TO-263 package. The series is characterized by advanced silicon technology aimed at improving power density and switching efficiency in discrete semiconductor applications.
Replacement Considerations
The AOT15S65L is a pin-compatible through-hole alternative with identical electrical characteristics. Verify package differences during substitution to ensure mechanical fit. No other direct substitutes are confirmed in public documentation.
