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Product Detailed Parameters
- Description：MOSFET N-CH 600V 20A TO263
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：199mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1038 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：266W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB20S60L is an N-channel MOSFET from the aMOS5 series, fabricated using Alpha & Omega Semiconductor's advanced high-voltage process. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 20 A at case temperature. The device guarantees avalanche capability with a maximum pulsed drain current (Idm) of 80 A. Key electrical parameters include a maximum on-resistance (Rds(on)) of 0.199 Ω, typical gate charge (Qg) of 20 nC, and energy in steady-state short circuit (Eoss) of 4.9 µJ at 400 V. It undergoes 100% UIS and Rg testing.
Feature Summary
- Advanced aMOS5 high-voltage process technology for robust switching performance
- Guaranteed avalanche capability with 100% UIS testing
- Low gate charge and on-resistance for efficient power management
- Optimized for offline power supply designs
Applications
- Offline power supply designs
- Switching applications requiring high robustness
- Power management systems utilizing aMOS5 technology
Procurement Notes
Verify the specific package type and pinout configuration against the official datasheet before integration, as variations may exist within the product family. Confirm that the 600V rating and 20A current handling meet the thermal and electrical requirements of the target application. Ensure compatibility with existing PCB footprints if replacing legacy components. Check for any recent product change notices or lifecycle status updates directly from the manufacturer to ensure long-term availability.
Selection Notes
Select this component for applications demanding high voltage isolation and reliable avalanche ruggedness. The low gate charge facilitates faster switching speeds, reducing dynamic losses. Consider the thermal dissipation capabilities when designing heat sinks, as the on-resistance impacts conduction losses. This part is suitable for designs where guaranteed UIS performance is critical for system reliability under fault conditions.
Part Context
The AOB20S60L belongs to the aMOS5 series, which utilizes Alpha & Omega Semiconductor's proprietary high-voltage process. This series is engineered to deliver high performance and robustness in switching applications. The device is designed to be quickly adopted into new and existing offline power supply designs, offering a balance of low Rds(on), low Qg, and optimized Eoss characteristics.
Replacement Considerations
Direct substitutes include other parts from the same family such as AOT20S60 and AOB20S60, which share similar specifications. Verify pin compatibility and thermal characteristics when considering cross-references from other manufacturers.
