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The AOB2500L is a surface-mount N-channel enhancement mode MOSFET utilizing Trench technology. It features a drain-source voltage of 150V and a continuous drain current of 152A at 25°C case temperature. The device offers an on-resistance of less than 6.2mΩ at VGS=10V and 20A, with a maximum gate threshold voltage of 3.5V. Total gate charge is 136nC at 10V. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-263 (D2PAK) package.
Verify the specific ordering suffix matches the required packaging format, such as tape and reel or cut tape. Confirm RoHS compliance status and ensure the component meets REACH regulations. Check for any recent product change notices regarding subcontractor name changes or assembly modifications before finalizing procurement orders.
Select this component for applications requiring high current handling and efficient thermal dissipation in surface-mount designs. Evaluate the thermal resistance characteristics against the specific PCB copper area and airflow conditions. Ensure the drive voltage supports the specified on-resistance thresholds for optimal efficiency in synchronous rectification or boost topologies.
This part belongs to the Alpha & Omega Semiconductor AOT/AOB series of N-channel MOSFETs. It utilizes advanced trench technology designed to balance low static resistance with dynamic switching capabilities. The device is intended for general-purpose power switching applications where high reliability and thermal performance are critical requirements.
The datasheet lists the AOT2500L as the through-hole equivalent. Verify pinout compatibility and thermal pad configuration when substituting between package types. Ensure replacement parts meet the same electrical ratings for voltage, current, and on-resistance specifications.
The maximum continuous drain current is 152A at a case temperature of 25°C and 107A at a case temperature of 100°C.
Yes, the device undergoes 100% unclamped inductive switching (UIS) testing to verify its avalanche energy and current ratings.
The typical reverse recovery time (trr) is 90ns under test conditions of IF=20A and dI/dt=500A/ms.