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Product Detailed Parameters
- Description：MOSFET N-CH 60V 11A/72A TO263
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2995 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 100W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Download product information
Overview
The AOB2608L is a surface-mount N-Channel MOSFET from Alpha & Omega Semiconductor, utilizing Trench technology for optimized high-frequency switching. It features a Drain-Source Voltage (VDS) of 60 V and a continuous Drain Current (ID) of 72 A at VGS=10V. The maximum On-Resistance (RDS(ON)) is less than 8.0 mΩ at VGS=10V, with a typical value of 7.6 mΩ. Packaged in TO-263 (D2PAK), it supports a junction temperature range of -55°C to 175°C.
Feature Summary
- Trench MOSFET technology minimizes conduction and switching power losses through low RDS(ON), Ciss, and Coss values.
- Optimized for efficient high-frequency switching performance in power conversion applications.
- 100% Unclamped Inductive Switching (UIS) tested for enhanced reliability under inductive load conditions.
Applications
- Boost converters
- Synchronous rectifiers
- Consumer power supplies
- Telecom power supplies
- Industrial power supplies
- LED backlighting
Procurement Notes
Verify the specific package variant required, as the datasheet covers both TO-220 and TO-263 (D2PAK) packages. Confirm that the application environment remains within the specified consumer market scope, as critical life support uses are not authorized. Ensure thermal management design accounts for the junction-to-ambient resistance characteristics provided in the datasheet.
Selection Notes
Select this component when a 60V N-Channel MOSFET with high current capability (72A) is needed for synchronous rectification or boost topologies. The low on-resistance and gate charge parameters make it suitable for high-efficiency designs. Consider the TO-263 package for surface mount assembly requirements while ensuring adequate PCB copper area for thermal dissipation.
Part Context
The AOB2608L belongs to the AOT/AOB series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. These devices leverage advanced trench gate technology to deliver superior performance compared to standard planar MOSFETs. The product line targets cost-effective solutions for various power supply applications requiring robust switching capabilities.
Replacement Considerations
Direct substitutes must match the 60V rating, N-channel configuration, and TO-263 package. Verify that alternative components meet or exceed the 72A continuous drain current and <8.0mΩ on-resistance specifications. Ensure compatibility with existing thermal management designs due to similar power dissipation profiles.
FAQ
What is the maximum junction temperature for the AOB2608L?
The maximum junction temperature is 175°C, although the product is designed and qualified for the consumer market with a typical operating limit of 150°C based on junction-to-ambient thermal resistance.
Is the AOB2608L suitable for use in life support devices?
No. The product has been designed and qualified for the consumer market. Applications or uses as critical components in life support devices or systems are not authorized.
How does the RDS(ON) vary with temperature?
The on-resistance increases with junction temperature. The datasheet provides normalized on-resistance curves showing the relationship between RDS(ON) and temperature from 25°C to 175°C.
