AOB2618L

AOB2618L

$0.77
  • Description:MOSFET N-CH 60V 7A/23A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:df6052646886 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 7A/23A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Ta), 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:19mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 41.5W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB2618L

Overview

The AOB2618L is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, utilizing trench technology for optimized high-frequency switching. It features a drain-source voltage of 60V and a continuous drain current of 23A at TC=25°C. The device offers an on-resistance of less than 19mΩ at VGS=10V and 25mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.4V to 2.5V, total gate charge of 14nC to 20nC at 10V, and input capacitance of 950pF. It operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • Trench MOSFET technology minimizes conduction and switching power losses through low RDS(ON) and capacitance values.
  • Optimized for efficient high-frequency switching performance in power conversion applications.
  • Manufactured with 100% UIS (Unclamped Inductive Switching) testing to ensure robustness against avalanche events.

Applications

  • Boost converters
  • Synchronous rectifiers
  • Consumer power supplies
  • Telecom power supplies
  • LED backlighting

Procurement Notes

Verify the specific package variant required, as the datasheet covers multiple packages including TO-263 (D2PAK), TO-220, and TO-220F. Confirm that the application environment aligns with the consumer market qualification stated in the documentation. Ensure thermal management design accounts for the specified junction-to-case resistance values provided in the datasheet tables.

Selection Notes

Select this component when a 60V rating is sufficient and low on-resistance is critical for efficiency. Compare the 23A continuous current limit against peak load requirements. Consider the TO-263 package for surface mount assembly needs. Evaluate the gate charge specifications against driver capabilities to ensure adequate switching speed without excessive drive current demands.

Part Context

The AOB2618L belongs to the AOT2618L/AOB2618L/AOTF2618L family, sharing identical electrical characteristics but differing in physical packaging. It is part of Alpha & Omega Semiconductor's trench MOSFET lineup designed for general-purpose power switching. The 'L' suffix typically denotes lead-free compliance, consistent with RoHS standards mentioned in related product descriptions.

Replacement Considerations

Electrically equivalent parts include AOT2618L and AOTF2618L. These share the same datasheet specifications but utilize different packages: TO-220 and TO-220F respectively. Verify pinout compatibility and thermal pad configuration before substituting, as package dimensions differ significantly between D2PAK and axial leads.

FAQ

What is the maximum junction temperature for the AOB2618L?

The maximum junction temperature is 175°C, as specified in the absolute maximum ratings and thermal characteristic notes.

Is the AOB2618L suitable for unclamped inductive switching applications?

Yes, the device undergoes 100% UIS testing, and single-pulse avalanche capability data is provided in the typical electrical characteristics.

How does the on-resistance vary with gate voltage?

The on-resistance is less than 19mΩ at VGS=10V and increases to less than 25mΩ at VGS=4.5V, allowing for logic-level driving considerations.

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