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Product Detailed Parameters
- Description：MOSFET N-CH 80V 18.5A/105A TO263
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：18.5A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：178 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：7765 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 272.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB282L is an N-Channel MOSFET from Alpha & Omega Semiconductor Inc., utilizing trench technology optimized for high-frequency switching. It features a Drain-Source Voltage (VDS) of 80 V and a continuous drain current (ID) of 105 A at VGS=10V. The static drain-source on-resistance (RDS(ON)) is less than 3.5 mΩ at VGS=10V and less than 5.2 mΩ at VGS=6V. The device is housed in a TO-263 (D2PAK) surface mount package.
Feature Summary
- Optimized trench MOSFET technology designed to minimize conduction and switching power losses through low RDS(ON), Ciss, and Coss values.
- Capable of handling high-frequency switching performance suitable for efficient power conversion applications.
Applications
- Boost converters
- Synchronous rectifiers
- Consumer power supplies
- Telecom power supplies
- Industrial power supplies
- LED backlighting
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and electrical tolerances. Ensure compatibility with intended thermal management designs, as junction-to-ambient resistance varies based on PCB copper area and airflow conditions. Confirm RoHS compliance status if required by project specifications.
Selection Notes
Select this component when an 80 V rating and high current capability are required for synchronous rectification or boost topologies. Consider the low gate charge and fast switching speeds for efficiency optimization. Evaluate thermal requirements carefully, as power dissipation limits depend heavily on the specific heatsinking and board layout used in the final application.
Part Context
This part belongs to the AOT/AOB series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. These devices are engineered for general-purpose power switching applications requiring robust performance in compact surface-mount packages. The AOB variant specifically denotes the TO-263 surface-mount configuration.
Replacement Considerations
Check datasheets for alternative parts offering similar 80 V ratings and comparable RDS(ON) values. Verify pinout compatibility and thermal characteristics before substitution. Ensure any replacement meets the same UIS testing standards if avalanche energy handling is critical to the circuit design.
