AOB284L

AOB284L

  • Description:MOSFET N-CH 80V 16A/105A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:272fe35d0309 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 80V 16A/105A TO263
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:16A (Ta), 105A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:4.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5154 pF @ 40 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 250W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB284L

Overview

The AOB284L is an 80V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It provides a continuous drain current of 105A at VGS=10V and a maximum junction temperature of 175°C. The device features low on-resistance, with RDS(ON) less than 4.3mΩ at VGS=10V and 5.5mΩ at VGS=6V for the TO-263 package. It includes 100% UIS and gate resistance testing.

Feature Summary

  • Advanced trench MOSFET technology minimizes conduction and switching power losses through low RDS(ON), Ciss, and Coss values.
  • Capable of handling high avalanche energy and repetitive avalanche currents due to 100% UIS testing.
  • Optimized for efficient high-frequency switching performance in demanding power applications.

Applications

  • Boost converters
  • Synchronous rectifiers
  • Consumer power supplies
  • Telecom power supplies
  • Industrial power supplies
  • LED backlighting

Procurement Notes

Verify the specific package variant (TO-220 or TO-263/D2PAK) as thermal characteristics and electrical parameters differ between them. Confirm RoHS compliance status and ensure the supplier provides the official Alpha & Omega Semiconductor datasheet for accurate parameter validation before integration.

Selection Notes

Select based on required voltage rating and thermal management capabilities. The TO-263 package offers lower thermal resistance compared to the TO-220. Consider the gate charge and capacitance values for driving requirements in high-frequency circuits. Ensure the application stays within the Safe Operating Area limits defined in the datasheet.

Part Context

The AOB284L belongs to the AOT/AOB series of N-Channel MOSFETs from Alpha & Omega Semiconductor. These devices are designed for general-purpose power switching applications requiring high efficiency and robust performance under high current and voltage conditions.

Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that the replacement device meets or exceeds the 80V breakdown voltage and 105A current rating. Ensure the new component supports the required switching frequency and gate drive voltage levels.

FAQ

What is the maximum junction temperature for the AOB284L?

The maximum junction temperature is 175°C.

Is the AOB284L tested for unclamped inductive switching?

Yes, the device undergoes 100% UIS testing to ensure reliability under inductive load conditions.

What is the typical gate threshold voltage range?

The gate threshold voltage ranges from 2.3V to 3.3V at TJ=25°C.

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