AOB2910L

Description：MOSFET N CH 100V 6A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:8cd1f1ca0fe9 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N CH 100V 6A TO263
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：23.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1190 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AOB2910L

Overview

The AOB2910L is a 100V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features a maximum drain current of 30A at VGS=10V and an on-resistance below 24mΩ at VGS=10V, or 33mΩ at VGS=4.5V. The device supports a continuous drain current of 22A and a pulsed drain current of 60A. It includes 100% UIS and Rg testing, with a junction temperature range from -55°C to 175°C.

Feature Summary

Trench MOSFET technology designed for efficient high-frequency switching performance
Minimized conduction and switching power losses through low on-resistance and capacitance values
Subjected to 100% Unclamped Inductive Switching (UIS) and gate resistance testing

Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Procurement Notes

Verify the specific package type matches the application requirements, as this model corresponds to the TO-263 surface mount variant within the shared family datasheet. Confirm that the thermal management design accounts for the specified junction-to-case resistance values under intended operating conditions. Ensure compatibility with the required gate drive voltage levels for optimal on-state performance.

Selection Notes

Select this component when a 100V rating and high-frequency switching efficiency are required. Consider the TO-263 package constraints for board space and thermal dissipation. Evaluate the gate charge characteristics against the driving circuit capabilities to ensure adequate switching speeds. Verify that the load current remains within the continuous and pulsed limits defined in the absolute maximum ratings.

Part Context

This part belongs to the AOT2910L/AOB2910L/AOTF2910L series of 100V N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. While sharing core electrical specifications, the suffix indicates a distinct physical package configuration. The AOB2910L specifically utilizes the TO-263 surface mount package, differentiating it from the through-hole variants in the same product line.

Replacement Considerations

Direct substitutes include the AOT2910L and AOTF2910L, which share identical electrical parameters but differ in package style. When replacing, verify that the new component's package footprint and thermal characteristics align with the existing PCB layout and cooling infrastructure.