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Product Detailed Parameters
- Description：MOSFET N-CH 500V 29A TO263
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1312 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB29S50L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOSTM high-voltage process. It features a drain-source voltage of 500V and a continuous drain current of 29A at 25°C case temperature. The device offers a maximum on-resistance of 0.15Ω at VGS=10V and a typical gate charge of 26.6nC. It includes guaranteed avalanche capability with repetitive energy ratings up to 37.9mJ and dv/dt ruggedness of 65V/ns. Packaged in a TO-263 (D2PAK) housing, it supports junction temperatures up to 150°C.
Feature Summary
- Fabricated using advanced aMOSTM high-voltage process for robust switching performance
- Guaranteed avalanche capability with 100% UIS testing
- High dv/dt ruggedness rated at 65V/ns
- Low total gate charge and output capacitance energy for efficient operation
Applications
- Offline power supply designs
- Switching applications requiring high voltage tolerance
- Power stages needing robust avalanche endurance
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm RoHS3 compliance status prior to integration. Ensure thermal management design accounts for the specified junction-to-case resistance. Validate package compatibility with existing PCB footprints. Review datasheet revisions for any recent specification updates.
Selection Notes
Select this component for designs requiring high breakdown voltage and reliable avalanche performance. Evaluate thermal constraints based on the specified junction-to-case resistance. Consider the gate charge requirements for driver selection. Verify that the TO-263 package fits the mechanical layout. Assess operating temperature ranges against application demands.
Part Context
This part belongs to the AOT29S50L/AOB29S50L family sharing identical electrical characteristics across different packaging options like TO-220 and TO-263. It is designed as a replacement for legacy high-voltage MOSFETs in offline converters. The aMOSTM technology ensures consistent performance in demanding power conversion environments.
Replacement Considerations
Direct substitutes include AOT29S50L and AOTF29S50L which share identical electrical specifications. Verify pinout compatibility when transitioning between TO-220 and TO-263 packages. Ensure thermal interface materials match the new package's mounting requirements.
