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The AOB360A70L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary aMOS5 technology. It features a drain-source voltage rating of 700V and a maximum pulsed drain current of 48A. The device offers a typical on-resistance of 0.316 ohms at VGS=10V and ID=6A. Key electrical parameters include a gate charge of 22.5nC, input capacitance of 1360pF, and reverse recovery time of 310ns. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-263 (D2PAK) package.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact package variant and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets all applicable export control regulations before procurement. Evaluate suitability for intended applications as per standard industry practices.
Select this component for high-voltage applications requiring low conduction losses and improved electromagnetic interference management. Consider the thermal resistance characteristics and safe operating area when designing heatsinking solutions. Ensure gate drive voltages align with the specified threshold and on-resistance conditions for optimal efficiency.
This part belongs to the AOT(B)360A70L family, which includes variants in TO-220 and TO-220F packages. All members share identical electrical characteristics but differ in physical mounting configurations. The AOB360A70L specifically denotes the surface-mount D2PAK version suitable for automated assembly processes.
Direct substitutes include AOT360A70L and AOTF360A70L, which share identical electrical specifications. Verify pinout compatibility and thermal interface requirements when transitioning between package types.
The maximum pulsed drain current (IDM) is rated at 48A.
Yes, the device incorporates an enhanced body diode designed for robustness and fast reverse recovery.