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Product Detailed Parameters
- Description：MOSFET N-CH 80V 11A/105A TO263
- Series：SDMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：4870 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 333W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263 (D2PAK)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The AOB482L is an N-channel MOSFET from Alpha & Omega Semiconductor Inc., featuring a drain-source voltage of 80V and a continuous drain current of 11A at ambient temperature or 105A at case temperature. It utilizes the aMOS5 technology in a TO-263 (D2PAK) package. The device operates within a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.1W at ambient conditions.
Feature Summary
- N-channel configuration utilizing aMOS5 technology for enhanced performance
- High current handling capability suitable for power switching applications
- Surface-mount construction in a D2PAK package for efficient thermal management
Applications
- DC-DC converter circuits
- Power management systems
- Motor control interfaces
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm package integrity and marking consistency against official datasheet specifications. Ensure storage conditions comply with moisture sensitivity level requirements to maintain device reliability prior to assembly.
Selection Notes
Select this component for applications requiring 80V blocking capability and high pulsed current handling. Evaluate thermal resistance parameters relative to the specific PCB layout and heat sinking strategy. Compare gate charge characteristics against drive circuit capabilities to ensure optimal switching efficiency and minimize transition losses.
Part Context
This part belongs to the Alpha & Omega Semiconductor discrete semiconductor product line, specifically categorized under N-channel MOSFETs. It is designed for general-purpose power switching applications where compact surface-mount packaging and robust electrical characteristics are required for reliable operation in electronic circuits.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters carefully before implementation.
